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STD2NK90ZT4|STMICRO|simage
STD2NK90ZT4|STMICRO|limage
MOSFETs

STD2NK90ZT4

Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R

STMicroelectronics
Datasheets 

Product Technical Specifications
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    SuperMESH
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    900
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    2.1
  • Maximum Drain-Source Resistance (mOhm)
    6500@10V
  • Typical Gate Charge @ Vgs (nC)
    19.5@10V
  • Typical Gate Charge @ 10V (nC)
    19.5
  • Typical Input Capacitance @ Vds (pF)
    485@25V
  • Maximum Power Dissipation (mW)
    70000
  • Typical Fall Time (ns)
    40
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    43
  • Typical Turn-On Delay Time (ns)
    21
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.4(Max)
  • Package Width
    6.2(Max)
  • Package Length
    6.6(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources