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RF FETs

STAC4932B

Trans RF MOSFET N-CH 200V 5-Pin STAC780-4B Loose

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    200
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Gate-Source Leakage Current (nA)
    250
  • Maximum IDSS (uA)
    1000
  • Typical Input Capacitance @ Vds (pF)
    570@100V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    8@100V
  • Typical Output Capacitance @ Vds (pF)
    134@100V
  • Typical Forward Transconductance (S)
    6
  • Maximum Output Power (W)
    1200(Typ)
  • Typical Power Gain (dB)
    26
  • Maximum Frequency (MHz)
    250
  • Typical Drain Efficiency (%)
    60
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Loose
  • Supplier Temperature Grade
    Industrial
  • Mounting
    Surface Mount
  • Package Height
    5.33(Max) mm
  • Package Width
    9.91(Max) mm
  • Package Length
    34.19(Max) mm
  • PCB changed
    5
  • Supplier Package
    STAC780-4B
  • Pin Count
    5
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources