| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 150 | |
| 6 | |
| 1000 | |
| 1 | |
| 29.8@4.5V | |
| 12.8@4.5V | |
| 840@10V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8 | |
| Mounting | Surface Mount |
| Package Width | 1.8 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23F |
| 3 | |
| Lead Shape | Flat |
Compared to traditional transistors, SSM3J328R,LF power MOSFETs, developed by Toshiba, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This device utilizes u-mos vi technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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