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SS8550CBU|ONSEMI|simage
SS8550CBU|ONSEMI|limage
GP BJT

SS8550CBU

Trans GP BJT PNP 25V 1.5A 1000mW 3-Pin TO-92 Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    25
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@80mA@800mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@80mA@800mA
  • Maximum DC Collector Current (A)
    1.5
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    120@100mA@1V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.2(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources