Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
NRND
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
800
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.9
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
17
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
290@10V
Typical Gate Charge @ Vgs (nC)
88@10V
Typical Gate Charge @ 10V (nC)
88
Typical Gate to Drain Charge (nC)
45
Typical Gate to Source Charge (nC)
12
Typical Reverse Recovery Charge (nC)
15000
Typical Input Capacitance @ Vds (pF)
2300@100V
Minimum Gate Threshold Voltage (V)
2.1
Typical Output Capacitance (pF)
94
Maximum Power Dissipation (mW)
227000
Typical Fall Time (ns)
12
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
72
Typical Turn-On Delay Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
250@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
51
Typical Diode Forward Voltage (V)
1
Typical Reverse Recovery Time (ns)
550
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
21.1(Max) mm
Package Width
5.16(Max) mm
Package Length
16.03(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole