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MOSFETs

SIR880BDP-T1-RE3

Trans MOSFET N-CH 80V 18.6A 8-Pin PowerPAK SO EP T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    18.6
  • Maximum Drain-Source Resistance (mOhm)
    6.5@10V
  • Typical Gate Charge @ Vgs (nC)
    19.5@4.5V|43.5@10V
  • Typical Gate Charge @ 10V (nC)
    43.5
  • Typical Input Capacitance @ Vds (pF)
    2930@40V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    12|9
  • Typical Rise Time (ns)
    7|73
  • Typical Turn-Off Delay Time (ns)
    40|39
  • Typical Turn-On Delay Time (ns)
    12|28
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.99
  • Package Width
    5.75
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    PowerPAK SO EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources