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SI3493BDVT1GE3|VISHAY|simage
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MOSFETs

SI3493BDV-T1-GE3

Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    0.18um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    0.9
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Drain-Source Resistance (mOhm)
    27.5@4.5V
  • Typical Gate Charge @ Vgs (nC)
    26.2@4.5V|29@5V
  • Typical Input Capacitance @ Vds (pF)
    1805@10V
  • Maximum Power Dissipation (mW)
    2080
  • Typical Fall Time (ns)
    84
  • Typical Rise Time (ns)
    72
  • Typical Turn-Off Delay Time (ns)
    75
  • Typical Turn-On Delay Time (ns)
    22
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources