| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 0.9 | |
| -55 to 150 | |
| 3 | |
| 100 | |
| 1 | |
| 50@4.5V | |
| 8@4.5V | |
| 2.3 | |
| 1.1 | |
| 715@6V | |
| 200@6V | |
| 0.45 | |
| 275 | |
| 1190 | |
| 50 | |
| 35 | |
| 50 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8 | |
| 12 | |
| 1.2 | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3.04(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this SI2315BDS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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