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SI2315BDST1E3|VISHAY|simage
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MOSFETs

SI2315BDS-T1-E3

Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    12
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    0.9
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    50@4.5V
  • Typical Gate Charge @ Vgs (nC)
    8@4.5V
  • Typical Gate to Drain Charge (nC)
    2.3
  • Typical Gate to Source Charge (nC)
    1.1
  • Typical Input Capacitance @ Vds (pF)
    715@6V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    200@6V
  • Minimum Gate Threshold Voltage (V)
    0.45
  • Typical Output Capacitance (pF)
    275
  • Maximum Power Dissipation (mW)
    1190
  • Typical Fall Time (ns)
    50
  • Typical Rise Time (ns)
    35
  • Typical Turn-Off Delay Time (ns)
    50
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    8
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    12
  • Maximum Diode Forward Voltage (V)
    1.2
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources