DRAM Chip

S80KS5123GABHI023

DRAM Chip DDR SDRAM 512Mbit 64Mx8 1.8V 24-Pin FBGA T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  3A991.b.2

• Part Status

  Active

• HTS

  8542.32.00.02

• Automotive

  No

• PPAP

  No

• DRAM Type

  DDR SDRAM

• Chip Density (bit)

  512M

• Organization

  64Mx8

• Number of Bits/Word (bit)

  8

• Data Bus Width (bit)

  8

• Maximum Clock Rate (MHz)

  200

• Maximum Access Time (ns)

  35

• Address Bus Width (bit)

  25

• Minimum Operating Supply Voltage (V)

  1.7

• Maximum Operating Supply Voltage (V)

  1.9

• Operating Current (mA)

  44

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  8

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1(Max) - 0.2(Min)

• Package Width

  6

• Package Length

  8

• PCB changed

  24

• Standard Package Name

  BGA

• Supplier Package

  FBGA

• Pin Count

  24