Flash

S29GL512S11DHIV20

NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 64-Pin Fortified BGA Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  3A991b.1.a.

• Part Status

  Active

• HTS

  8542.32.00.71

• Automotive

  No

• PPAP

  No

• Cell Type

  NOR

• Chip Density (bit)

  512M

• Architecture

  Sectored

• Boot Block

  Yes

• Block Organization

  Symmetrical

• Location of Boot Block

  Bottom|Top

• Address Width (bit)

  25

• Sector Size

  128Kbyte x 512

• Page Size

  32byte

• Number of Bits/Word (bit)

  16

• Number of Words

  32M

• Programmability

  Yes

• Timing Type

  Asynchronous

• Max. Access Time (ns)

  110

• Maximum Erase Time (s)

  1.1/Sector

• Maximum Page Access Time (ns)

  25

• Maximum Programming Time (ms)

  192/Sector

• OE Access Time (ns)

  35

• Process Technology

  65nm

• Interface Type

  Parallel

• Minimum Operating Supply Voltage (V)

  2.7

• Typical Operating Supply Voltage (V)

  3|3.3

• Maximum Operating Supply Voltage (V)

  3.6

• Programming Voltage (V)

  2.7 to 3.6

• Operating Current (mA)

  60

• Page Read Current (mA)

  25

• Program Current (mA)

  100

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Command Compatible

  Yes

• ECC Support

  Yes

• Support of Page Mode

  Yes

• Minimum Endurance (Cycles)

  100000

• Packaging

  Tray

• Mounting

  Surface Mount

• Package Height

  0.6(Min) mm

• Package Width

  9 mm

• Package Length

  9 mm

• PCB changed

  64

• Standard Package Name

  BGA

• Supplier Package

  Fortified BGA

• Pin Count

  64

• Lead Shape

  Ball