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S29GL01GS12DAE023|INFINEON|limage
S29GL01GS12DAE023|INFINEON|simage
Flash

S29GL01GS12DAE023

NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 120ns T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    3A001.a.2.c
  • Part Status
    Active
  • HTS
    8542.32.00.51
  • Automotive
    No
  • PPAP
    No
  • Cell Type
    NOR
  • Chip Density (bit)
    1G
  • Architecture
    Sectored
  • Boot Block
    Yes
  • Block Organization
    Symmetrical
  • Location of Boot Block
    Bottom|Top
  • Address Width (bit)
    26
  • Sector Size
    128Kbyte x 1024
  • Page Size
    512byte
  • Number of Bits/Word (bit)
    16
  • Number of Words
    64M
  • Timing Type
    Asynchronous
  • Max. Access Time (ns)
    120
  • Maximum Erase Time (s)
    1.1/Sector
  • Maximum Page Access Time (ns)
    25
  • Maximum Programming Time (ms)
    269/Sector
  • OE Access Time (ns)
    25
  • Interface Type
    Parallel
  • Minimum Operating Supply Voltage (V)
    2.7
  • Typical Operating Supply Voltage (V)
    3|3.3
  • Maximum Operating Supply Voltage (V)
    3.6
  • Programming Voltage (V)
    2.7 to 3.6
  • Operating Current (mA)
    60
  • Page Read Current (mA)
    25
  • Program Current (mA)
    100
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    125
  • Supplier Temperature Grade
    Military
  • Command Compatible
    Yes
  • ECC Support
    Yes
  • Support of Page Mode
    Yes
  • Packaging
    Tape and Reel

Documentation and Resources

Datasheets
Design resources