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RQ1E050RPHZGTR|ROHM|limage
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MOSFET

RQ1E050RPHZGTR

Trans MOSFET P-CH 30V 5A 8-Pin TSMT T/R Automotive AEC-Q101

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    5
  • Maximum Drain-Source Resistance (mOhm)
    31@10V
  • Typical Gate Charge @ Vgs (nC)
    13@5V
  • Typical Input Capacitance @ Vds (pF)
    1300@10V
  • Maximum Power Dissipation (mW)
    1500
  • Typical Fall Time (ns)
    50
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    90
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.8(Max) mm
  • Package Width
    2.5(Max) mm
  • Package Length
    3.1(Max) mm
  • PCB changed
    8
  • Supplier Package
    TSMT
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources