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MOSFET

R2P020N06HZGT100

Trans MOSFET N-CH 60V 2A Automotive 4-Pin(3+Tab) MPT

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±12
  • Operating Junction Temperature (°C)
    150
  • Maximum Continuous Drain Current (A)
    2
  • Maximum Drain-Source Resistance (mOhm)
    240@4.5V
  • Typical Gate Charge @ Vgs (nC)
    5@4V
  • Typical Input Capacitance @ Vds (pF)
    160@1V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    18
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Mounting
    Surface Mount
  • Package Width
    2.55
  • Package Length
    4.55
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    MPT
  • Pin Count
    4
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources