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OP506B|OPTEK|simage
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Phototransistors

OP506B

Phototransistor Chip Silicon 935nm 2-Pin T-1 Bag

TT Electronics / Optek Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.49.80.00
  • Automotive
    No
  • PPAP
    No
  • Type
    Chip
  • Phototransistor Type
    Phototransistor
  • Lens Shape Type
    Domed
  • Lens Color
    Blue
  • Material
    Silicon
  • Number of Channels per Chip
    1
  • Polarity
    NPN
  • Viewing Orientation
    Top View
  • Peak Wavelength (nm)
    935
  • Maximum Light Current (uA)
    5950
  • Maximum Collector Current (mA)
    20
  • Maximum Dark Current (nA)
    100
  • Maximum Emitter-Collector Voltage (V)
    5
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4
  • Maximum Power Dissipation (mW)
    100
  • Fabrication Technology
    NPN Transistor
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    100
  • Packaging
    Bag
  • Diameter
    4.19(Max)
  • Mounting
    Through Hole
  • Package Height
    5.08(Max) + 0.76
  • PCB changed
    2
  • Supplier Package
    T-1
  • Pin Count
    2
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources