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NVMYS2D1N04CLTWG|ONSEMI|simage
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MOSFETs

NVMYS2D1N04CLTWG

Trans MOSFET N-CH 40V 29A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    29
  • Maximum Drain-Source Resistance (mOhm)
    2.5@10V
  • Typical Gate Charge @ Vgs (nC)
    23@4.5V|50@10V
  • Typical Input Capacitance @ Vds (pF)
    3100@25V
  • Maximum Power Dissipation (mW)
    3900
  • Typical Fall Time (ns)
    9.4
  • Typical Rise Time (ns)
    8.3
  • Typical Turn-Off Delay Time (ns)
    28
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.15 mm
  • Package Width
    4.15 mm
  • Package Length
    4.9 mm
  • PCB changed
    4
  • Tab
    Tab
  • Supplier Package
    LFPAK
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources