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NVMJS2D5N06CLTWG|ONSEMI|simage
NVMJS2D5N06CLTWG|ONSEMI|limage
MOSFETs

NVMJS2D5N06CLTWG

Trans MOSFET N-CH 60V 31A 8-Pin LFPAK EP T/R Automotive AEC-Q101

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    31
  • Maximum Drain-Source Resistance (mOhm)
    2.4@10V
  • Typical Gate Charge @ Vgs (nC)
    24@4.5V|52@10V
  • Typical Gate Charge @ 10V (nC)
    52
  • Typical Input Capacitance @ Vds (pF)
    3600@25V
  • Maximum Power Dissipation (mW)
    3900
  • Typical Fall Time (ns)
    8.5
  • Typical Rise Time (ns)
    55
  • Typical Turn-Off Delay Time (ns)
    37
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.15 mm
  • Package Width
    4.8 mm
  • Package Length
    4.9 mm
  • PCB changed
    8
  • Supplier Package
    LFPAK EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources