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NVMJS0D9N04CLTWG|ONSEMI|simage
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MOSFETs

NVMJS0D9N04CLTWG

Power MOSFET Automotive AEC-Q101

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Drain-Source Resistance (mOhm)
    0.82@10V
  • Typical Gate Charge @ Vgs (nC)
    66@4.5V|143@10V
  • Typical Gate Charge @ 10V (nC)
    143
  • Typical Reverse Recovery Charge (nC)
    126
  • Typical Input Capacitance @ Vds (pF)
    8862@25V
  • Minimum Gate Threshold Voltage (V)
    1.2
  • Typical Output Capacitance (pF)
    3328
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    900
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    36
  • Maximum Diode Forward Voltage (V)
    1.2
  • Mounting
    Surface Mount
  • Package Height
    1.15
  • Package Width
    4.8
  • Package Length
    4.9
  • PCB changed
    8
  • Supplier Package
    LFPAK EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources