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NTTFS4H05NTWG|ONSEMI|simage
NTTFS4H05NTWG|ONSEMI|limage
MOSFETs

NTTFS4H05NTWG

Trans MOSFET N-CH 25V 22.4A 8-Pin WDFN EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.1
  • Maximum Continuous Drain Current (A)
    22.4
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    3.3@10V
  • Typical Gate Charge @ Vgs (nC)
    8.7@4.5V|18.9@10V
  • Typical Gate Charge @ 10V (nC)
    18.9
  • Typical Input Capacitance @ Vds (pF)
    1205@12V
  • Maximum Power Dissipation (mW)
    2660
  • Typical Fall Time (ns)
    2.3|3
  • Typical Rise Time (ns)
    32|27
  • Typical Turn-Off Delay Time (ns)
    14.6|18.6
  • Typical Turn-On Delay Time (ns)
    8.9|6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    3.05
  • Package Length
    3.05
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    WDFN EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources