The ON Semiconductor MOSFETs are able to quickly switch between data lines as well as amplify the signals themselves. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 1250 mW. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT-23 Surface Mount for Small Footprint
• NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant
Application:
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC-DC Conversion
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
NTR4501NT1G
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.2
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.2
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1.5
Maximum Drain-Source Resistance (mOhm)
80@4.5V
Typical Gate Charge @ Vgs (nC)
2.4@4.5V
Typical Gate Charge @ 10V (nC)
2.4
Typical Gate to Drain Charge (nC)
0.6
Typical Gate to Source Charge (nC)
0.5
Typical Reverse Recovery Charge (nC)
3
Typical Input Capacitance @ Vds (pF)
200@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
50@10V
Minimum Gate Threshold Voltage (V)
0.65
Typical Output Capacitance (pF)
80
Maximum Power Dissipation (mW)
1250
Typical Fall Time (ns)
3
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
12
Typical Turn-On Delay Time (ns)
6.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
70@4.5V|88@2.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
1.25
Maximum Pulsed Drain Current @ TC=25°C (A)
10
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
300
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
1.7
Typical Reverse Recovery Time (ns)
7.1
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate-Source Voltage (V)
12
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
3.2
Mounting
Surface Mount
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing