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NTMTS001N06CLTXG|ONSEMI|simage
NTMTS001N06CLTXG|ONSEMI|limage
MOSFETs

NTMTS001N06CLTXG

Trans MOSFET N-CH 60V 56.9A 8-Pin TDFNW EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    56.9
  • Maximum Drain-Source Resistance (mOhm)
    0.81@10V
  • Typical Gate Charge @ Vgs (nC)
    165@10V|74.3@4.5V
  • Typical Gate Charge @ 10V (nC)
    165
  • Typical Input Capacitance @ Vds (pF)
    12300@25V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    23.3
  • Typical Rise Time (ns)
    25.2
  • Typical Turn-Off Delay Time (ns)
    70.7
  • Typical Turn-On Delay Time (ns)
    47.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.15(Max)
  • Package Width
    7.9
  • Package Length
    8
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    TDFNW EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources