MOSFETs

NTMS4816NR2G

Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R

onsemi

Product Technical Specifications

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Obsolete

• Código HTS

  NTMS4816NR2G

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  9

• Maximum Drain-Source Resistance (mOhm)

  10@10V

• Typical Gate Charge @ Vgs (nC)

  9.2@4.5V|18.3@10V

• Typical Gate Charge @ 10V (nC)

  18.3

• Typical Input Capacitance @ Vds (pF)

  1060@25V

• Maximum Power Dissipation (mW)

  2040

• Typical Fall Time (ns)

  8

• Typical Rise Time (ns)

  3.8

• Typical Turn-Off Delay Time (ns)

  21.6

• Typical Turn-On Delay Time (ns)

  8

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.5(Max) mm

• Package Width

  4(Max) mm

• Package Length

  5(Max) mm

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC N

• Pin Count

  8

• Lead Shape

  Gull-wing