Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12@N Channel|±8@P Channel
Maximum Continuous Drain Current (A)
2.9@N Channel|3.2@P Channel
Maximum Drain-Source Resistance (mOhm)
80@4.5V
Typical Gate Charge @ Vgs (nC)
2.3@4.5V@N Channel|7.4@4.5V@P Channel
Typical Input Capacitance @ Vds (pF)
165@10V@N Channel|680@10V@P Channel
Maximum Power Dissipation (mW)
1100
Typical Fall Time (ns)
1.5@N Channel|12.4@P Channel
Typical Rise Time (ns)
11.7@P Channel|10.7@N Channel
Typical Turn-Off Delay Time (ns)
9.6@N Channel|16@P Channel
Typical Turn-On Delay Time (ns)
6.3@N Channel|5.8@P Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.05 mm
Package Width
1.65 mm
Package Length
3.05 mm
PCB changed
8
Supplier Package
Chip FET
Pin Count
8
Lead Shape
Flat