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NGTD14T65F2WP|ONSEMI|simage
NGTD14T65F2WP|ONSEMI|limage
IGBT Chip

NGTD14T65F2WP

Trans IGBT Chip N-CH 650V 3-Pin Die WJAR

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Technology
    Field Stop II|Trench
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    650
  • Typical Collector-Emitter Saturation Voltage (V)
    1.7
  • Maximum Gate Emitter Leakage Current (uA)
    0.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    WJAR
  • Package Height
    0.08
  • Package Width
    3.55
  • Package Length
    3.55
  • PCB changed
    3
  • Supplier Package
    Die
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources