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NDS7002A|ONSEMI|simage
NDS7002A|ONSEMI|limage
MOSFETs

NDS7002A

Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Process Technology
    Power Trench T1
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -65 to 150
  • Maximum Continuous Drain Current (A)
    0.28
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2000@10V
  • Typical Gate Charge @ Vgs (nC)
    40@4.5V|0.6@10V
  • Typical Gate Charge @ 10V (nC)
    0.6
  • Typical Input Capacitance @ Vds (pF)
    20@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    4@25V
  • Minimum Gate Threshold Voltage (V)
    1
  • Typical Output Capacitance (pF)
    11
  • Maximum Power Dissipation (mW)
    300
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1200@10V|1700@5V
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    1.5
  • Typical Diode Forward Voltage (V)
    0.88
  • Typical Gate Plateau Voltage (V)
    4.5
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    2.1
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.3
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources