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MW6S010NR1|NXP|simage
MW6S010NR1|NXP|limage
RF FETs

MW6S010NR1

Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    2-Tone
  • Maximum Drain-Source Voltage (V)
    68
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum VSWR
    10
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    0.32@28V
  • Typical Output Capacitance @ Vds (pF)
    10@28V
  • Maximum Power Dissipation (mW)
    61400
  • Maximum Output Power (W)
    10(Typ)
  • Typical Power Gain (dB)
    20
  • Maximum Frequency (MHz)
    1500
  • Minimum Frequency (MHz)
    450
  • Typical Drain Efficiency (%)
    33
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.08(Max) mm
  • Package Width
    6.15(Max) mm
  • Package Length
    9.7(Max) mm
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-270
  • Pin Count
    3
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources