Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.10.00.80
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
23
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
113
Maximum Drain-Source Resistance (mOhm)
31@20V
Typical Gate Charge @ Vgs (nC)
232@20V
Typical Input Capacitance @ Vds (pF)
3633@1000V
Maximum Power Dissipation (mW)
577000
Typical Fall Time (ns)
16
Typical Rise Time (ns)
23
Typical Turn-Off Delay Time (ns)
39
Typical Turn-On Delay Time (ns)
17
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175