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MRFE6VP5300NR1|NXP|simage
MRFE6VP5300NR1|NXP|limage
RF FETs

MRFE6VP5300NR1

Trans RF MOSFET N-CH 133V 5-Pin TO-270 W T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.75
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Mode of Operation
    CW|Pulsed RF
  • Maximum Drain-Source Voltage (V)
    133
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    2.8
  • Maximum VSWR
    65
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    10
  • Typical Input Capacitance @ Vds (pF)
    168@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.4@50V
  • Typical Output Capacitance @ Vds (pF)
    63@50V
  • Maximum Power Dissipation (mW)
    909000
  • Maximum Output Power (W)
    361(Typ)
  • Typical Power Gain (dB)
    27
  • Maximum Frequency (MHz)
    600
  • Minimum Frequency (MHz)
    1.8
  • Typical Drain Efficiency (%)
    71
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.64(Max) mm
  • Package Width
    9.07(Max) mm
  • Package Length
    17.58(Max) mm
  • PCB changed
    5
  • Standard Package Name
    TO
  • Supplier Package
    TO-270 W
  • Pin Count
    5
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources