RF FETs

MRF8P8300HSR6

Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R

NXP Semiconductors

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.55

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Configuration

  Dual Common Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Mode of Operation

  1-Carrier W-CDMA

• Maximum Drain-Source Voltage (V)

  70

• Maximum Gate-Source Voltage (V)

  10

• Maximum VSWR

  10

• Maximum Output Power (W)

  96(Typ)

• Typical Power Gain (dB)

  20.9

• Maximum Frequency (MHz)

  820

• Minimum Frequency (MHz)

  790

• Typical Drain Efficiency (%)

  35.7

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  225

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.83(Max) mm

• Package Width

  10.29(Max) mm

• Package Length

  32.39(Max) mm

• PCB changed

  5

• Supplier Package

  NI-1230S

• Pin Count

  5