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MRF13750HR5|NXP|simage
MRF13750HR5|NXP|limage
RF FETs

MRF13750HR5

Trans RF MOSFET N-CH 105V 4-Pin CFM T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    MOSFET
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Maximum Drain-Source Voltage (V)
    105
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    2.3
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    10
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.94@50V
  • Typical Output Capacitance @ Vds (pF)
    63.8@50V
  • Maximum Power Dissipation (mW)
    1333000
  • Maximum Output Power (W)
    850(Typ)
  • Typical Power Gain (dB)
    20.4
  • Maximum Frequency (MHz)
    1300
  • Minimum Frequency (MHz)
    700
  • Typical Drain Efficiency (%)
    69.2
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Screw
  • Package Height
    4.83(Max) mm
  • Package Width
    10.29(Max) mm
  • Package Length
    41.28(Max) mm
  • PCB changed
    4
  • Supplier Package
    CFM
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources