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MMRF1315NR1|NXP|simage
MMRF1315NR1|NXP|limage
RF FETs

MMRF1315NR1

Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    1-Carrier N-CDMA
  • Maximum Drain-Source Voltage (V)
    66
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    10
  • Typical Input Capacitance @ Vds (pF)
    109@28V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.1@28V
  • Typical Output Capacitance @ Vds (pF)
    33@28V
  • Maximum Output Power (W)
    60(Typ)
  • Typical Power Gain (dB)
    20|21.1
  • Maximum Frequency (MHz)
    1000
  • Minimum Frequency (MHz)
    500
  • Typical Drain Efficiency (%)
    33
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    2.08(Max) mm
  • Package Width
    6.15(Max) mm
  • Package Length
    9.7(Max) mm
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-270
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources