Arrow Electronic Components Online
MMRF1310HR5|NXP|simage
MMRF1310HR5|NXP|limage
RF FETs

MMRF1310HR5

Trans RF MOSFET N-CH 133V 5-Pin NI-780 T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.75
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Mode of Operation
    1-Tone
  • Maximum Drain-Source Voltage (V)
    133
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    2.7
  • Maximum VSWR
    65
  • Maximum IDSS (uA)
    10
  • Typical Input Capacitance @ Vds (pF)
    188@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    0.8@50V
  • Typical Output Capacitance @ Vds (pF)
    76@50V
  • Maximum Power Dissipation (mW)
    1050000
  • Maximum Output Power (W)
    300(Typ)
  • Typical Power Gain (dB)
    26.5
  • Maximum Frequency (MHz)
    600
  • Minimum Frequency (MHz)
    1.8
  • Typical Drain Efficiency (%)
    74
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Screw
  • Package Height
    4.32(Max) mm
  • Package Width
    9.91(Max) mm
  • Package Length
    34.16(Max) mm
  • PCB changed
    5
  • Supplier Package
    NI-780
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources