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MJD45H111G|ONSEMI|simage
MJD45H111G|ONSEMI|limage
GP BJT

MJD45H11-1G

Trans GP BJT PNP 80V 8A 1750mW 3-Pin(3+Tab) IPAK Tube

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    1.5@0.8A@8A
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@0.4A@8A
  • Maximum DC Collector Current (A)
    8
  • Minimum DC Current Gain
    60@2A@1V|40@4A@1V
  • Maximum Power Dissipation (mW)
    1750
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    6.35(Max)
  • Package Width
    2.38(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    IPAK
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources