Arrow Electronic Components Online
JANTX2N3019S|SEMICOA|simage
JANTX2N3019S|SEMICOA|limage
GP BJT

JANTX2N3019S

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39

Semicoa Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    140
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    1.1@15mA@150mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.2@15mA@150mA|0.5@50mA@500mA
  • Maximum DC Collector Current (A)
    1
  • Minimum DC Current Gain
    50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V
  • Maximum Power Dissipation (mW)
    800
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources