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IS46DR16320E3DBLA2|ISSI|simage
IS46DR16320E3DBLA2|ISSI|limage
DRAM Chip

IS46DR16320E-3DBLA2

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V Automotive AEC-Q100 84-Pin TW-BGA

Integrated Silicon Solution Inc
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8542.32.00.28
  • Automotive
    Yes
  • PPAP
    Yes
  • DRAM Type
    DDR2 SDRAM
  • Chip Density (bit)
    512M
  • Organization
    32Mx16
  • Number of Internal Banks
    4
  • Number of Words per Bank
    8M
  • Number of Bits/Word (bit)
    16
  • Data Bus Width (bit)
    16
  • Maximum Clock Rate (MHz)
    667
  • Maximum Access Time (ns)
    0.45
  • Address Bus Width (bit)
    15
  • Interface Type
    SSTL_18
  • Minimum Operating Supply Voltage (V)
    1.7
  • Maximum Operating Supply Voltage (V)
    1.9
  • Operating Current (mA)
    190
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    105
  • Supplier Temperature Grade
    Automotive
  • Number of I/O Lines (bit)
    16
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    8
  • Package Length
    12.5
  • PCB changed
    84
  • Standard Package Name
    BGA
  • Supplier Package
    TW-BGA
  • Pin Count
    84

Documentation and Resources

Datasheets
Design resources