DRAM Chip

IS43LQ32256B-062BLI

DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin TFBGA

Integrated Silicon Solution Inc

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Preliminary

• HTS

  EA

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile LPDDR4 SDRAM

• Chip Density (bit)

  8G

• Organization

  256Mx32

• Number of Internal Banks

  8

• Number of Words per Bank

  32M

• Number of Bits/Word (bit)

  32

• Data Bus Width (bit)

  32

• Maximum Clock Rate (MHz)

  1600

• Maximum Access Time (ns)

  3.5

• Address Bus Width (bit)

  18

• Interface Type

  LVSTL

• Minimum Operating Supply Voltage (V)

  1.06|1.7

• Maximum Operating Supply Voltage (V)

  1.17|1.95

• Operating Current (mA)

  560

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  32

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  10

• Package Length

  14.5

• PCB changed

  200

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  200