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IS43DR82560C25DBLI|ISSI|simage
IS43DR82560C25DBLI|ISSI|limage
DRAM Chip

IS43DR82560C-25DBLI

DRAM Chip DDR2 SDRAM 2Gbit 256Mx8 1.8V 60-Pin TW-BGA

Integrated Silicon Solution Inc
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8542.32.00.36
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    DDR2 SDRAM
  • Chip Density (bit)
    2G
  • Organization
    256Mx8
  • Number of Internal Banks
    8
  • Number of Words per Bank
    32M
  • Number of Bits/Word (bit)
    8
  • Data Bus Width (bit)
    8
  • Maximum Clock Rate (MHz)
    800
  • Maximum Access Time (ns)
    0.4
  • Address Bus Width (bit)
    18
  • Interface Type
    SSTL_18
  • Minimum Operating Supply Voltage (V)
    1.7
  • Maximum Operating Supply Voltage (V)
    1.9
  • Operating Current (mA)
    198
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    85
  • Supplier Temperature Grade
    Industrial
  • Number of I/O Lines (bit)
    8
  • Mounting
    Surface Mount
  • Package Height
    1(Max) mm
  • Package Width
    8 mm
  • Package Length
    10.5 mm
  • PCB changed
    60
  • Standard Package Name
    BGA
  • Supplier Package
    TW-BGA
  • Pin Count
    60

Documentation and Resources

Datasheets
Design resources