DRAM Chip

IS42VM32160E-6BLI

DRAM Chip Mobile SDRAM 512Mbit 16Mx32 1.8V 90-Pin TFBGA

Integrated Silicon Solution Inc

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8542.32.00.28

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile SDRAM

• Chip Density (bit)

  512M

• Organization

  16Mx32

• Number of Internal Banks

  4

• Number of Words per Bank

  4M

• Number of Bits/Word (bit)

  32

• Data Bus Width (bit)

  32

• Maximum Clock Rate (MHz)

  1000

• Maximum Access Time (ns)

  8|5.5

• Address Bus Width (bit)

  15

• Interface Type

  LVCMOS

• Minimum Operating Supply Voltage (V)

  1.7

• Maximum Operating Supply Voltage (V)

  1.95

• Operating Current (mA)

  130

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  32

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  8

• Package Length

  13

• PCB changed

  90

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  90

• Lead Shape

  Ball