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MOSFETs

IRLMS2002TRPBF

Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.2
  • Maximum Continuous Drain Current (A)
    6.5
  • Maximum Drain-Source Resistance (mOhm)
    30@4.5V
  • Typical Gate Charge @ Vgs (nC)
    15@5V
  • Typical Gate to Drain Charge (nC)
    3.5
  • Typical Gate to Source Charge (nC)
    2.2
  • Typical Reverse Recovery Charge (nC)
    13
  • Typical Input Capacitance @ Vds (pF)
    1310@15V
  • Typical Output Capacitance (pF)
    150
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    16
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    36
  • Typical Turn-On Delay Time (ns)
    8.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    36@2V|25.5@3V|22.5@4V|22@5V|21.25@6V|21@7V
  • Mounting
    Surface Mount
  • Package Height
    1.3(Max)
  • Package Width
    1.75(Max)
  • Package Length
    3(Max)
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources