Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
55
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
29
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
40@10V
Typical Gate Charge @ Vgs (nC)
34(Max)@10V
Typical Gate Charge @ 10V (nC)
34(Max)
Typical Gate to Drain Charge (nC)
14(Max)
Typical Gate to Source Charge (nC)
6.8(Max)
Typical Reverse Recovery Charge (nC)
130
Typical Input Capacitance @ Vds (pF)
700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
100@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
240
Maximum Power Dissipation (mW)
68000
Typical Fall Time (ns)
40
Typical Rise Time (ns)
49
Typical Turn-Off Delay Time (ns)
31
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Maximum Pulsed Drain Current @ TC=25°C (A)
100
Typical Gate Plateau Voltage (V)
5.8
Typical Reverse Recovery Time (ns)
57
Maximum Diode Forward Voltage (V)
1.6
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
8.7
Package Width
4.2
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole