Arrow Electronic Components Online
IRFU4105ZPBF|INFINEON|simage
IRFU4105ZPBF|INFINEON|limage
MOSFETs

IRFU4105ZPBF

Trans MOSFET N-CH Si 55V 30A 3-Pin(3+Tab) IPAK Tube

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    55
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    30
  • Maximum Drain-Source Resistance (mOhm)
    24.5@10V
  • Typical Gate Charge @ Vgs (nC)
    18@10V
  • Typical Gate Charge @ 10V (nC)
    18
  • Typical Gate to Drain Charge (nC)
    7
  • Typical Input Capacitance @ Vds (pF)
    740@25V
  • Maximum Power Dissipation (mW)
    48000
  • Typical Fall Time (ns)
    24
  • Typical Rise Time (ns)
    40
  • Typical Turn-Off Delay Time (ns)
    26
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    19@10V
  • Mounting
    Through Hole
  • Package Height
    6.22(Max) mm
  • Package Width
    2.39(Max) mm
  • Package Length
    6.73(Max) mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    IPAK
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources