Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Dual Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
1.8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
500@10V
Typical Gate Charge @ Vgs (nC)
12(Max)@10V
Typical Gate Charge @ 10V (nC)
12(Max)
Typical Gate to Drain Charge (nC)
5.1(Max)
Typical Gate to Source Charge (nC)
3.8(Max)
Typical Reverse Recovery Charge (nC)
96
Typical Input Capacitance @ Vds (pF)
270@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
31@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
31
Typical Rise Time (ns)
63
Typical Turn-Off Delay Time (ns)
9.6
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
14
Typical Reverse Recovery Time (ns)
80
Maximum Diode Forward Voltage (V)
5.5
Mounting
Surface Mount
Package Height
1.8(Max) - 0.06
Package Width
3.7(Max)
Package Length
6.7(Max)
PCB changed
3
Tab
Tab
Standard Package Name
SOT
Supplier Package
SOT-223
Pin Count
4