Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
NRND
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.7
Maximum Continuous Drain Current (A)
23
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
3.2@10V
Typical Gate Charge @ Vgs (nC)
110@10V
Typical Gate Charge @ 10V (nC)
110
Typical Gate to Drain Charge (nC)
36
Typical Input Capacitance @ Vds (pF)
6460@25V
Maximum Power Dissipation (mW)
156000
Typical Fall Time (ns)
23
Typical Rise Time (ns)
25
Typical Turn-Off Delay Time (ns)
63
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2.6@10V|3.6@6V
Mounting
Surface Mount
Package Height
0.81
Package Width
6
Package Length
5
PCB changed
8
Standard Package Name
QFN
Supplier Package
PQFN EP
Pin Count
8