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IRF7404TRPBF|INFINEON|simage
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MOSFETs

IRF7404TRPBF

Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    0.7(Min)
  • Maximum Continuous Drain Current (A)
    6.7
  • Maximum Drain-Source Resistance (mOhm)
    40@4.5V
  • Typical Gate Charge @ Vgs (nC)
    50(Max)@4.5V
  • Typical Gate to Drain Charge (nC)
    21(Max)
  • Typical Gate to Source Charge (nC)
    5.5(Max)
  • Typical Reverse Recovery Charge (nC)
    71
  • Typical Input Capacitance @ Vds (pF)
    1500@15V
  • Typical Output Capacitance (pF)
    730
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    65
  • Typical Rise Time (ns)
    32
  • Typical Turn-Off Delay Time (ns)
    100
  • Typical Turn-On Delay Time (ns)
    14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max) mm
  • Package Width
    4(Max) mm
  • Package Length
    5(Max) mm
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources