Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
3.6
Maximum Drain-Source Resistance (mOhm)
73@10V
Typical Gate Charge @ Vgs (nC)
15@10V
Typical Gate Charge @ 10V (nC)
15
Typical Input Capacitance @ Vds (pF)
660@25V
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
41
Typical Turn-On Delay Time (ns)
9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
61@10V
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
4(Max)
Package Length
5(Max)
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing