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Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
4@N Channel|3@P Channel
Maximum Drain-Source Resistance (mOhm)
50@10V@N Channel|100@10V@P Channel
Typical Gate Charge @ Vgs (nC)
25(Max)@4.5V
Typical Input Capacitance @ Vds (pF)
520@15V@N Channel|440@15V@P Channel
Maximum Power Dissipation (mW)
1400
Typical Fall Time (ns)
7.7@N Channel|18@P Channel
Typical Rise Time (ns)
21@N Channel|17@P Channel
Typical Turn-Off Delay Time (ns)
22@N Channel|25@P Channel
Typical Turn-On Delay Time (ns)
6.8@N Channel|11@P Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
4(Max)
Package Length
5(Max)
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing