Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
5
Maximum Continuous Drain Current (A)
3.4
Maximum Drain-Source Resistance (mOhm)
100@10V
Typical Gate Charge @ Vgs (nC)
26@10V
Typical Gate Charge @ 10V (nC)
26
Typical Input Capacitance @ Vds (pF)
1500@25V
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
14
Typical Rise Time (ns)
8.6
Typical Turn-Off Delay Time (ns)
7.2
Typical Turn-On Delay Time (ns)
6.2
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
85@10V
Mounting
Surface Mount
Package Height
0.53(Max)
Package Width
5.05(Max)
Package Length
5.45(Max)
PCB changed
7
Supplier Package
Direct-FET MZ
Pin Count
7
Lead Shape
No Lead