MOSFETs

IRF6614TRPBF

IRF6614TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R Si - Arrow.com

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Dual Drain Dual Source

• Process Technology

  DirectFET

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2.25

• Maximum Continuous Drain Current (A)

  12.7

• Maximum Drain-Source Resistance (mOhm)

  8.3@10V

• Typical Gate Charge @ Vgs (nC)

  19@4.5V

• Typical Gate to Drain Charge (nC)

  6

• Typical Gate to Source Charge (nC)

  5.9

• Typical Reverse Recovery Charge (nC)

  5.5

• Typical Switch Charge (nC)

  7.4

• Typical Input Capacitance @ Vds (pF)

  2560@20V

• Typical Output Capacitance (pF)

  370

• Maximum Power Dissipation (mW)

  2100

• Typical Fall Time (ns)

  3.6

• Typical Rise Time (ns)

  27

• Typical Turn-Off Delay Time (ns)

  18

• Typical Turn-On Delay Time (ns)

  13

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  5.9@10V|7.1@4.5V

• Mounting

  Surface Mount

• Package Height

  0.53(Max)

• Package Width

  3.95(Max)

• Package Length

  3.95(Max)

• PCB changed

  7

• Supplier Package

  Direct-FET ST

• Pin Count

  7

• Lead Shape

  No Lead