Arrow Electronic Components Online
IRF60R217|INFINEON|simage
IRF60R217|INFINEON|limage
MOSFETs

IRF60R217

Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3.7
  • Maximum Continuous Drain Current (A)
    58
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    9.9@10V
  • Typical Gate Charge @ Vgs (nC)
    40@10V
  • Typical Gate Charge @ 10V (nC)
    40
  • Typical Gate to Drain Charge (nC)
    12
  • Typical Input Capacitance @ Vds (pF)
    2170@25V
  • Maximum Power Dissipation (mW)
    83000
  • Typical Fall Time (ns)
    12
  • Typical Rise Time (ns)
    29
  • Typical Turn-Off Delay Time (ns)
    21
  • Typical Turn-On Delay Time (ns)
    7.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    8@10V|10@6V
  • Mounting
    Surface Mount
  • Package Height
    2.39(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-252
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources