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IRF3710PBF|INFINEON|simage
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MOSFETs

IRF3710PBF

Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    57
  • Maximum Drain-Source Resistance (mOhm)
    23@10V
  • Typical Gate Charge @ Vgs (nC)
    130(Max)@10V
  • Typical Gate Charge @ 10V (nC)
    130(Max)
  • Typical Input Capacitance @ Vds (pF)
    3130@25V
  • Maximum Power Dissipation (mW)
    200000
  • Typical Fall Time (ns)
    47
  • Typical Rise Time (ns)
    58
  • Typical Turn-Off Delay Time (ns)
    45
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.02(Max)
  • Package Width
    4.83(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources