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IRF150P221AKMA1|INFINEON|simage
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MOSFETs

IRF150P221AKMA1

Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    150
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4.6
  • Maximum Continuous Drain Current (A)
    186
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    4.5@10V
  • Typical Gate Charge @ Vgs (nC)
    80@10V
  • Typical Gate Charge @ 10V (nC)
    80
  • Typical Gate to Drain Charge (nC)
    16
  • Typical Input Capacitance @ Vds (pF)
    6000@75V
  • Maximum Power Dissipation (mW)
    3800
  • Typical Fall Time (ns)
    62
  • Typical Rise Time (ns)
    90
  • Typical Turn-Off Delay Time (ns)
    29
  • Typical Turn-On Delay Time (ns)
    23
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    3.6@10V
  • Mounting
    Through Hole
  • Package Height
    21 mm
  • Package Width
    5 mm
  • Package Length
    15.8 mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources